lbd101/28ygh-xx doc. no : qw0905- rev. : a date : - 2005 31 - may lbd101/28ygh-xx data sheet bar digit led display ligitek electronics co.,ltd. property of ligitek only
note : 1.all dimension are in millimeters and (lnch) tolerance is ? 0.25mm unless otherwise noted. 2.specifications are subject to change without notice. ligitek electronics co.,ltd. property of ligitek only lbd101/28ygh-xx package dimensions part no. page 1/9 22.4(0.882") 25.3(0.996") pin no.1 orientation mark 5.0 (0.197") 1.75(0.069") yy yy y yy y 6.0 ? 0.5 lbd101/28ygh-xx ligitek 8.0(0.315") 10.1 (0.398") 7.6 (0.299") h g r 0.45 typ
lbd101/28ygh-xx internal circuit diagram 19 19 lbd101/8ygh-xx lbd102/8ygh-xx 12 20 2 1 20 part no. 10 6 4 35 8 7 9 10 11 15 17 18 16 13 14 12 6 4 35 9 8 7 ligitek electronics co.,ltd. property of ligitek only 11 15 17 18 16 13 14 12 2/9 page
page ligitek electronics co.,ltd. property of ligitek only cathode 9. 10. cathode 6. 8. 7. 5. 4. cathode cathode cathode cathode cathode 19. anode anode 20. anode anode anode anode anode 16. 18. 17. 15. 14. lbd102/8ygh-xx pin no. 1. 3. 2. 11. cathode cathode cathode 8. 10. 9. 7. 6. anode anode anode anode anode anode anode anode 11. 13. 12. cathode cathode cathode cathode cathode 18. 20. 19. 17. 16. part no. lbd101/8ygh-xx pin no. 3. 4. 5. 2. 1. anode anode anode anode anode lbd101/28ygh-xx electrical connection cathode cathode cathode cathode cathode 13. 14. 15. 12. 11. 3/9
lbd101/28ygh-xx note : 1.the forward voltage data did not including ? 0.1v testing tolerance. 2. the luminous intensity data did not including ? 15% testing tolerance. part selection and application information(ratings at 25 ) j part no 35 ??f (nm) 30 f p ( nm) common cathode or anode common anode common cathode gap green gaasp/gap material yellow emitted 565 585 chip iv-m vf(v) iv(mcd) 1.75 2.35 min. 2.1 1.7 2.6 2.1 typ. 1.7 min. 2.6 max. 2:1 3.05 3.05 typ. electrical lbd101/28ygh-xx storage temperature solder temperature 1-16 inch below seating plane for 3 seconds at 260 j peak forward current per chip (duty 1/10,0.1ms pulse width) power dissipation per chip operating temperature reverse current per any chip forward current per chip parameter absolute maximum ratings at ta=25 j part no. h y tstg opr t ir 10 80 i fp pd 60 i f 20 -25 ~ +85 -25 ~ +85 10 j j g a 60 40 15 ma mw ma ligitek electronics co.,ltd. property of ligitek only symbol ratings unit page 4/9 g 30 120 100 10 gap red 697 90 1.7 2.1 2.6 0.5 0.9
unit mcd volt g a nm nm ligitek electronics co.,ltd. property of ligitek only parameter spectral line half-width forward voltage per chip reverse current any chip luminous intensity matching ratio luminous intensity per chip peak wavelength ir iv-m ??f f p iv vf lbd101/28ygh-xx test condition for each parameter part no. symbol vr=5v if=20ma if=10ma if=20ma if=20ma test condition page 5/9
3.0 2.5 1.5 1.0 0.5 0.0 2.0 fig.4 relative intensity vs. temperature 1.0 relative intensity@20ma 550 wavelength (nm) 500 0.0 0.5 600 650 700 ambient temperature( j ) fig.5 relative intensity vs. wavelength fig.3 forward voltage vs. temperature forward voltage@20ma normalize @25 j -40 0.8 -20 1.0 0.9 1.1 1.2 relative intensity@20ma normalize @25 j 40 20 060100 80 ambient temperature( j ) -40 -20 020 60 40 100 80 3.0 2.5 2.0 1.5 1.0 0.5 0.0 ligitek electronics co.,ltd. property of ligitek only fig.2 relative intensity vs. forward current typical electro-optical characteristics curve part no. 2.0 fig.1 forward current vs. forward voltage forward voltage(v) 100 forward current(ma) 1.0 0.1 10 1.0 y chip 1000 relative intensity normalize @20ma 3.0 4.0 5.0 6/9 page forward current(ma) 1.0 10 100 1000 lbd101/28ygh-xx p6
fig.3 forward voltage vs. temperature fig.5 relative intensity vs. wavelength ambient temperature( j ) relative intensity@20ma wavelength (nm) forward voltage@20ma normalize @25 j fig.4 relative intensity vs. temperature ambient temperature( j ) relative intensity@20ma normalize @25 j typical electro-optical characteristics curve forward voltage(v) fig.1 forward current vs. forward voltage forward current(ma) page forward current(ma) fig.2 relative intensity vs. forward current relative intensity normalize @20ma ligitek electronics co.,ltd. property of ligitek only 1.0 0.1 1.0 10 100 1000 1.0 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40 -20 0 20 40 60 1.0 1.1 1.2 500 550 600 650 0.0 0.5 1.0 2.0 3.0 4.0 5.0 80 100 0.8 0.9 -20 -40 40 20 080100 60 2.0 0.0 0.5 1.0 1.5 2.5 3.0 3.5 g chip part no. 7/9 lbd101/28ygh-xx
1.5 relative intensity@20ma normalize @25 j forward voltage@20ma normalize @25 j ambient temperature( j ) 1000 900 800 700 600 wavelength (nm) fig.5 relative intensity vs. wavelength ambient temperature( j ) relative intensity@20ma 0.0 0.5 1.0 0.8 -40 0.9 -20 0 20 40 60 80 100 -40 0.0 1.0 0.5 -20 80 40 20 060100 ligitek electronics co.,ltd. property of ligitek only fig.2 relative intensity vs. forward current forward current(ma) fig.4 relative intensity vs. temperature forward voltage(v) fig.3 forward voltage vs. temperature 1.1 1.0 1.2 forward current(ma) 0.1 1.0 1.0 100 10 1000 2.0 3.0 2.0 3.0 2.5 relative intensity normalize @20ma 4.0 5.0 1.0 0.0 0.5 1.0 2.0 1.5 3.0 2.5 typical electro-optical characteristics curve fig.1 forward current vs. forward voltage h chip part no. 10 100 1000 page8/9 lbd101/28ygh-xx
solder resistance test this test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. 1.t.sol=260 j? 5 j 2.dwell time= 10 ? 1sec. mil-std-202: 210a mil-std-750: 2031 jis c 7021: a-1 mil-std-202: 208d mil-std-750: 2026 mil-std-883: 2003 jis c 7021: a-2 1.t.sol=230 j? 5 j 2.dwell time=5 ? 1sec solderability test this test intended to see soldering well performed or not. ligitek electronics co.,ltd. property of ligitek only jis c 7021: b-12 mil-std-883:1008 jis c 7021: b-10 mil-std-202: 107d mil-std-750: 1051 mil-std-883: 1011 mil-std-202:103b jis c 7021: b-11 mil-std-750: 1026 mil-std-883: 1005 jis c 7021: b-1 1.ta=-40 j? 5 j 2.t=1000 hrs (-24hrs, + 72hrs) 1.ta=105 j? 5 j 2.t=1000 hrs (-24hrs, + 72hrs) 1.ta=105 j? 5 j &-40 j? 5 j (10min) (10min) 2.total 10 cycles 1.under room temperature 2.if=10ma 3.t=1000 hrs (-24hrs, + 72hrs) high temperature high humidity test thermal shock test 1.ta=65 j? 5 j 2.rh=90 %~95 % 3.t=240hrs ? 2hrs operating life test low temperature storage test high temperature storage test the purpose of this is the resistance of the device which is laid under condition of low temperature for hours. the purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. the purpose of this test is the resistance of the device under tropical for hous. the purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. this test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. test condition test item lbd101/28ygh-xx reliability test: part no. description reference standard page 9/9
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